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Freescale Semiconductor Technical Data
Replaced by MRF1517NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.
Document Number: MRF1517 Rev. 3, 5/2006
RF Power Field Effect Transistor
MRF1517T1
N - Channel Enhancement - Mode Lateral MOSFET
The MRF1517 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large - signal, common source amplifier applications in 7.5 volt portable FM equipment. * Specified Performance @ 520 MHz, 7.5 Volts Output Power -- 8 Watts D Power Gain -- 11 dB Efficiency -- 55% * Characterized with Series Equivalent Large - Signal Impedance Parameters * Excellent Thermal Stability * Capable of Handling 20:1 VSWR, @ 9.5 Vdc, 520 MHz, 2 dB Overdrive G * Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request * Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel. S
ARCHIVE INFORMATION
CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate - Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature
(2) (1)
Symbol VDSS VGS ID PD Tstg TJ
Value - 0.5, +25 20 4 62.5 0.50 - 65 to +150 150
Unit Vdc Vdc Adc W W/C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 2 Unit C/W
Table 3. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 1. Not designed for 12.5 volt applications. T T 2. Calculated based on the formula PD = J - C RJC NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Rating 1 Package Peak Temperature 260 Unit C
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF1517T1 1
RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
520 MHz, 8 W, 7.5 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Current (VDS = 35 Vdc, VGS = 0) Gate - Source Leakage Current (VGS = 10 Vdc, VDS = 0) On Characteristics Gate Threshold Voltage (VDS = 7.5 Vdc, ID = 120 Adc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics Input Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Output Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Functional Tests (In Freescale Test Fixture) Common - Source Amplifier Power Gain (VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz) Drain Efficiency (VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz) VGG C9 C8 Gps 10 50 11 55 -- -- dB % Ciss Coss Crss -- -- -- 66 38 6 -- -- -- pF pF pF VGS(th) VDS(on) gfs 1.0 -- 0.9 1.7 0.5 -- 2.1 -- -- Vdc Vdc S IDSS IGSS -- -- -- -- 1 1 Adc Adc Symbol Min Typ Max Unit
ARCHIVE INFORMATION
B2 + C7 R3 B1 R2 C18 L1 Z6 DUT C10 C11 C12 C13 Z7 Z8 Z9 Z10 C14 N2 C17 C16 + C15
VDD
R1 N1 C1 C2 C3 C4 C5
C6
RF INPUT
Z1
Z2
Z3
Z4
Z5
RF OUTPUT
B1, B2 C1 C2, C3, C4, C10, C12, C13 C5, C11 C6, C18 C7, C15 C8, C16 C9, C17 C14 L1 N1, N2
Short Ferrite Bead, Fair Rite Products (2743021446) 300 pF, 100 mil Chip Capacitor 0 to 20 pF, Trimmer Capacitor 43 pF, 100 mil Chip Capacitor 120 pF, 100 mil Chip Capacitor 10 F, 50 V Electrolytic Capacitor 0.1 F, 100 mil Chip Capacitor 1,000 pF, 100 mil Chip Capacitor 330 pF, 100 mil Chip Capacitor 55.5 nH, 5 Turn, Coilcraft Type N Flange Mount
R1 R2 R3 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z8 Z9 Z10 Board
15 , 0805 Chip Resistor 1.0 k, 1/8 W Resistor 33 k, 1/2 W Resistor 0.315 x 0.080 Microstrip 1.415 x 0.080 Microstrip 0.322 x 0.080 Microstrip 0.022 x 0.080 Microstrip 0.260 x 0.223 Microstrip 0.050 x 0.080 Microstrip 0.625 x 0.080 Microstrip 0.800 x 0.080 Microstrip 0.589 x 0.080 Microstrip Glass Teflon(R), 31 mils, 2 oz. Copper
MRF1517T1 2
Figure 1. 480 - 520 MHz Broadband Test Circuit RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
TYPICAL CHARACTERISTICS, 480 - 520 MHz
10 Pout , OUTPUT POWER (WATTS) 8 6 4 2 VDD = 7.5 Vdc 0 500 MHz 480 MHz 0 520 MHz IRL, INPUT RETURN LOSS (dB) -5 -10 -15 -20 VDD = 7.5 Vdc -25 520 MHz 500 MHz 480 MHz
ARCHIVE INFORMATION
Figure 2. Output Power versus Input Power
Figure 3. Input Return Loss versus Output Power
MRF1517T1 RF Device Data Freescale Semiconductor 3
ARCHIVE INFORMATION
0
0.2
0.4 0.6 Pin, INPUT POWER (WATTS)
0.8
1.0
1
2
3
4 5 6 7 8 Pout, OUTPUT POWER (WATTS)
9
10
TYPICAL CHARACTERISTICS, 480 - 520 MHz
18 16 14 GAIN (dB) 12 10 8 6 VDD = 7.5 Vdc 1 2 3 4 5 6 7 8 Pout, OUTPUT POWER (WATTS) 9 10 520 MHz 500 MHz 80 480 MHz Eff, DRAIN EFFICIENCY (%) 70 60 50 40 30 20 10 1 2 3 5 6 7 8 4 Pout, OUTPUT POWER (WATTS) VDD = 7.5 Vdc 9 10 11 520 MHz 500 MHz 480 MHz
ARCHIVE INFORMATION
Figure 4. Gain versus Output Power
Figure 5. Drain Efficiency versus Output Power
12 10 8 6 4 2 0 Pin = 27 dBm VDD = 7.5 Vdc 0 200 400 600 IDQ, BIASING CURRENT (mA) 800 1000 500 MHz 520 MHz 480 MHz
80 70 60 50 40 30 Pin = 27 dBm VDD = 7.5 Vdc 0 200 400 600 IDQ, BIASING CURRENT (mA) 800 1000 480 MHz 500 MHz 520 MHz
Figure 6. Output Power versus Biasing Current
Figure 7. Drain Efficiency versus Biasing Current
12 10 8 6 4 2 0 Pin = 27 dBm IDQ = 150 mA 5 6 7 8 9 10 500 MHz 520 MHz 480 MHz
80 70 500 MHz 60 50 40 30 Pin = 27 dBm IDQ = 150 mA 5 6 7 8 9 10 520 MHz 480 MHz
Pout , OUTPUT POWER (WATTS)
VDD, SUPPLY VOLTAGE (VOLTS)
Eff, DRAIN EFFICIENCY (%)
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 8. Output Power versus Supply Voltage
Figure 9. Drain Efficiency versus Supply Voltage
MRF1517T1 4 RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
Pout , OUTPUT POWER (WATTS)
Eff, DRAIN EFFICIENCY (%)
VGG C8 C7
B2 + C6 R3 B1 R2 C17 L1 Z5 Z4 DUT C10 C9 C11 C12 Z6 Z7 Z8 Z9 C13 N2 C16 C15 + C14 VDD
R1 N1 C1 C2 C3 C4
C5
RF INPUT
Z1
Z2
Z3
RF OUTPUT
ARCHIVE INFORMATION
C1, C13 C2, C3, C4, C10, C11, C12 C5, C17 C6, C14 C7, C15 C8, C16 C9 L1 N1, N2
0 to 20 pF, Trimmer Capacitor 130 pF, 100 mil Chip Capacitor 10 F, 50 V Electrolytic Capacitor 0.1 F, 100 mil Chip Capacitor 1,000 pF, 100 mil Chip Capacitor 33 pF, 100 mil Chip Capacitor 55.5 nH, 5 Turn, Coilcraft Type N Flange Mount
Figure 10. 400 - 440 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 400 - 440 MHz
10 9 Pout , OUTPUT POWER (WATTS) IRL, INPUT RETURN LOSS (dB) 8 7 6 5 4 3 2 1 0 0 0.1 VDD = 7.5 Vdc 0.2 0.3 Pin, INPUT POWER (WATTS) 0.4 0.5 400 MHz 420 MHz 440 MHz -5 -10 -15 -20 -25 VDD = 7.5 Vdc 1 2 3 4 5 6 7 Pout, OUTPUT POWER (WATTS) 8 9 10 400 MHz 420 MHz 440 MHz 0
Figure 11. Output Power versus Input Power
Figure 12. Input Return Loss versus Output Power
MRF1517T1 RF Device Data Freescale Semiconductor 5
ARCHIVE INFORMATION
B1, B2
Short Ferrite Bead, Fair Rite Products (2743021446) 300 pF, 100 mil Chip Capacitor
R1 R2 R3 Z1 Z2 Z3 Z4, Z5 Z6 Z7 Z8 Z9 Board
12 , 0805 Chip Resistor 1.0 k, 1/8 W Resistor 33 k, 1/2 W Resistor 0.617 x 0.080 Microstrip 0.723 x 0.080 Microstrip 0.513 x 0.080 Microstrip 0.260 x 0.223 Microstrip 0.048 x 0.080 Microstrip 0.577 x 0.080 Microstrip 1.135 x 0.080 Microstrip 0.076 x 0.080 Microstrip Glass Teflon(R), 31 mils, 2 oz. Copper
TYPICAL CHARACTERISTICS, 400 - 440 MHz
17 15 13 GAIN (dB) 11 9 7 5 VDD = 7.5 Vdc 1 2 3 4 5 6 7 8 Pout, OUTPUT POWER (WATTS) 9 10 400 MHz 440 MHz 420 MHz Eff, DRAIN EFFICIENCY (%) 70 60 50 40 30 20 10 0 1 2 3 5 6 7 8 4 Pout, OUTPUT POWER (WATTS) 400 MHz 440 MHz 420 MHz
VDD = 7.5 Vdc 9 10 11
ARCHIVE INFORMATION
Figure 13. Gain versus Output Power
Figure 14. Drain Efficiency versus Output Power
12 10 8 6 4 2 0 Pin = 25.5 dBm VDD = 7.5 Vdc 0 200 400 600 IDQ, BIASING CURRENT (mA) 800 1000 400 MHz 420 MHz 440 MHz Eff, DRAIN EFFICIENCY (%)
80 70 440 MHz 60 50 40 30 400 MHz 420 MHz
Pin = 25.5 dBm VDD = 7.5 Vdc 0 200 400 600 IDQ, BIASING CURRENT (mA) 800 1000
Figure 15. Output Power versus Biasing Current
Figure 16. Drain Efficiency versus Biasing Current
12 10 8 6 4 2 0 Pin = 25.5 dBm IDQ = 150 mA 5 6 7 8 9 10 400 MHz 440 MHz 420 MHz Eff, DRAIN EFFICIENCY (%)
80 70 420 MHz 60 440 MHz 50 40 30 400 MHz
Pout , OUTPUT POWER (WATTS)
Pin = 25.5 dBm IDQ = 150 mA 5 6 7 8 9 10
VDD, SUPPLY VOLTAGE (VOLTS)
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 17. Output Power versus Supply Voltage
Figure 18. Drain Efficiency versus Supply Voltage
MRF1517T1 6 RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
Pout , OUTPUT POWER (WATTS)
VGG C8 C7
B2 + C6 R3 B1 R2 C17 L1 Z5 Z4 DUT C10 C9 C11 C12 Z6 Z7 Z8 Z9 C13 N2 C16 C15 VDD + C14
C5 R1 N1 C1 C2 C3 C4
RF INPUT
Z1
Z2
Z3
RF OUTPUT
ARCHIVE INFORMATION
C1 C2, C3, C4, C10, C11, C12 C5, C17 C6, C14 C7, C15 C8, C16 C9 C13 L1 N1, N2
0 to 20 pF, Trimmer Capacitor 130 pF, 100 mil Chip Capacitor 10 mF, 50 V Electrolytic Capacitor 0.1 mF, 100 mil Chip Capacitor 1,000 pF, 100 mil Chip Capacitor 39 pF, 100 mil Chip Capacitor 330 pF, 100 mil Chip Capacitor 55.5 nH, 5 Turn, Coilcraft Type N Flange Mount
Figure 19. 440 - 480 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 440 - 480 MHz
10 9 Pout , OUTPUT POWER (WATTS) IRL, INPUT RETURN LOSS (dB) 8 7 6 5 4 3 2 1 0 0.0 0.2 VDD = 7.5 Vdc 0.4 0.6 Pin, INPUT POWER (WATTS) 0.8 -25 1 2 3 480 MHz 460 MHz 440 MHz -5 -10 -15 480 MHz -20 VDD = 7.5 Vdc 4 5 6 7 Pout, OUTPUT POWER (WATTS) 8 9 10 0
460 MHz 440 MHz
Figure 20. Output Power versus Input Power
Figure 21. Input Return Loss versus Output Power
MRF1517T1 RF Device Data Freescale Semiconductor 7
ARCHIVE INFORMATION
B1, B2
Short Ferrite Bead, Fair Rite Products (2743021446) 240 pF, 100 mil Chip Capacitor
R1 R2 R3 Z1 Z2 Z3 Z4, Z5 Z6 Z7 Z8 Z9 Board
15 , 0805 Chip Resistor 1.0 k, 1/8 W Resistor 33 k, 1/2 W Resistor 0.471 x 0.080 Microstrip 1.082 x 0.080 Microstrip 0.372 x 0.080 Microstrip 0.260 x 0.223 Microstrip 0.050 x 0.080 Microstrip 0.551 x 0.080 Microstrip 0.825 x 0.080 Microstrip 0.489 x 0.080 Microstrip Glass Teflon(R), 31 mils, 2 oz. Copper
TYPICAL CHARACTERISTICS, 440 - 480 MHz
17 15 460 MHz 13 GAIN (dB) 11 9 7 5 VDD = 7.5 Vdc 1 2 3 6 7 8 4 5 Pout, OUTPUT POWER (WATTS) 9 10 480 MHz 440 MHz Eff, DRAIN EFFICIENCY (%) 70 60 50 40 30 20 10 0 1 2 3 VDD = 7.5 Vdc 480 MHz 440 MHz 460 MHz
ARCHIVE INFORMATION
Figure 22. Gain versus Output Power
Figure 23. Drain Efficiency versus Output Power
12 10 8 6 4 2 0 0 200 460 MHz 440 MHz 480 MHz
80 70 480 MHz 60 50 40 30 Pin = 27.5 dBm 0 200 400 600 IDQ, BIASING CURRENT (mA) 800 1000 460 MHz 440 MHz
Pin = 27.5 dBm 400 600 IDQ, BIASING CURRENT (mA) 800 1000
Figure 24. Output Power versus Biasing Current
Figure 25. Drain Efficiency versus Biasing Current
12 10 8 6 4 2 Pin = 27.5 dBm 0 5 6 7 8 9 10 440 MHz 460 MHz 480 MHz
80 70 480 MHz 60 50 40 30 Pin = 27.5 dBm 5 6 7 8 9 10 460 MHz 440 MHz
Pout , OUTPUT POWER (WATTS)
VDD, SUPPLY VOLTAGE (VOLTS)
Eff, DRAIN EFFICIENCY (%)
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 26. Output Power versus Supply Voltage
Figure 27. Drain Efficiency versus Supply Voltage
MRF1517T1 8 RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
5 6 7 8 4 Pout, OUTPUT POWER (WATTS)
9
10
11
Pout , OUTPUT POWER (WATTS)
Eff, DRAIN EFFICIENCY (%)
520 Zin f = 480 MHz
f = 440 MHz
Zin 480
f = 440 MHz 400 Zin
ARCHIVE INFORMATION
ZOL* Zo = 10
f = 480 MHz 400 Zo = 10
ZOL* Zo = 10
VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W f MHz 480 500 520 Zin Zin 1.06 +j1.82 0.97 +j2.01 ZOL* 3.51 +j0.99 2.82 +j0.75
VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W f MHz 440 460 480 Zin Zin 1.62 +j3.41 1.85 +j3.35 1.91 +j3.31 ZOL* 3.25 +j0.98 3.05 +j0.93 2.54 +j0.84 Zin
VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W f MHz 400 420 440 Zin 1.96 +j3.32 2.31 +j3.56 1.60 +j3.45 ZOL* 2.52 +j0.39 2.61 +j0.64 2.37 +j1.04
0.975 +j2.37 1.87 +j1.03
= Complex conjugate of source impedance.
= Complex conjugate of source impedance.
= Complex conjugate of source impedance.
ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %.
ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %.
ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %.
Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
Input Matching Network
Device Under Test
Output Matching Network
Z
in
Z
* OL
Figure 28. Series Equivalent Input and Output Impedance
MRF1517T1 RF Device Data Freescale Semiconductor 9
ARCHIVE INFORMATION
520
f = 480 MHz
ZOL*
440
f = 440 MHz
Table 5. Common Source Scattering Parameters (VDD = 7.5 Vdc) IDQ = 150 mA
f MHz MH 50 100 200 300 400 500 600 700 S11 |S11| 0.84 0.84 0.86 0.88 0.90 0.92 0.94 0.95 0.96 0.96 0.97 - 152 - 164 - 170 - 171 - 172 - 172 - 173 - 173 - 174 - 175 - 175 |S21| 17.66 8.86 4.17 2.54 1.72 1.28 0.98 0.76 0.61 0.50 0.40 S21 97 85 72 62 55 50 46 41 38 33 31 |S12| 0.016 0.016 0.015 0.014 0.013 0.013 0.014 0.010 0.011 0.011 0.006 S12 0 5 -5 -8 - 25 - 10 - 22 - 30 - 14 - 31 55 |S22| 0.77 0.78 0.79 0.80 0.83 0.84 0.86 0.86 0.86 0.85 0.88 S22 - 167 - 172 - 173 - 172 - 172 - 172 - 171 - 172 - 171 - 172 - 171
ARCHIVE INFORMATION
800 900 1000
IDQ = 800 mA
f MHz MH 50 100 200 300 400 500 600 700 800 900 1000 S11 |S11| 0.90 0.89 0.90 0.90 0.91 0.92 0.93 0.94 0.94 0.95 0.96 - 165 - 172 - 175 - 176 - 176 - 176 - 176 - 176 - 176 - 177 - 177 |S21| 20.42 10.20 4.96 3.17 2.26 1.75 1.39 1.14 0.93 0.78 0.65 S21 94 87 79 73 67 63 59 55 51 45 43 |S12| 0.018 0.015 0.015 0.017 0.013 0.011 0.012 0.015 0.008 0.007 0.008 S12 1 -7 - 12 -2 1 -6 - 31 - 34 - 22 2 - 40 |S22| 0.76 0.77 0.77 0.80 0.82 0.83 0.85 0.88 0.87 0.87 0.90 S22 - 164 - 170 - 172 - 171 - 172 - 171 - 171 - 171 - 171 - 172 - 170
IDQ = 1.5 A
f MHz MH 50 100 200 300 400 500 600 700 800 900 1000 S11 |S11| 0.92 0.90 0.91 0.91 0.92 0.93 0.94 0.94 0.95 0.96 0.97 - 165 - 172 - 176 - 176 - 176 - 176 - 176 - 176 - 176 - 177 - 177 |S21| 19.90 9.93 4.84 3.10 2.22 1.73 1.39 1.12 0.93 0.78 0.64 S21 95 88 80 74 68 64 61 56 52 46 44 |S12| 0.017 0.018 0.016 0.014 0.014 0.016 0.013 0.013 0.009 0.008 0.012 S12 3 2 -4 - 11 - 14 -8 - 24 - 24 - 12 10 4 |S22| 0.76 0.77 0.77 0.80 0.81 0.83 0.85 0.87 0.87 0.87 0.89 S22 - 164 - 170 - 172 - 172 - 172 - 171 - 171 - 171 - 171 - 173 - 169
MRF1517T1 10 RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
APPLICATIONS INFORMATION
DESIGN CONSIDERATIONS This device is a common - source, RF power, N - Channel enhancement mode, Lateral Metal - Oxide Semiconductor Field - Effect Transistor (MOSFET). Freescale Application Note AN211A, "FETs in Theory and Practice", is suggested reading for those not familiar with the construction and characteristics of FETs. This surface mount packaged device was designed primarily for VHF and UHF portable power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. However, care should be taken in the design process to insure proper heat sinking of the device. The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate - to - drain (Cgd), and gate - to - source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain - to - source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter - terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications.
Drain Cgd Gate Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd
drain - source voltage under these conditions is termed VDS(on). For MOSFETs, VDS(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not recommended and may result in possible damage to the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DC input resistance is very high - on the order of 109 -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate - to - source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open - circuited or floating should be avoided. These conditions can result in turn - on of the devices due to voltage build - up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate - to - source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate - to - source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate - drain capacitance. If the gate - to - source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate - threshold voltage and turn the device on. DC BIAS Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. RF power FETs operate optimally with a quiescent drain current (IDQ), whose value is application dependent. This device was characterized at IDQ = 150 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line.
ARCHIVE INFORMATION
Cds Cgs Source
DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full - on condition. This on - resistance, RDS(on), occurs in the linear region of the output characteristic and is specified at a specific gate - source voltage and drain current. The
MRF1517T1 RF Device Data Freescale Semiconductor 11
ARCHIVE INFORMATION
ARCHIVE INFORMATION
MRF1517T1 12 RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
MOUNTING The specified maximum thermal resistance of 2C/W assumes a majority of the 0.065 x 0.180 source contact on the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. Refer to Freescale Application Note AN4005/D, "Thermal Management and Mounting Method for the PLD - 1.5 RF Power Surface Mount Package," and Engineering Bulletin EB209/D, "Mounting Method for RF Power Leadless Surface Mount Transistor" for additional information. AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Freescale Application Note AN721, "Impedance Matching Networks Applied to RF Power Transistors."
Large - signal impedances are provided, and will yield a good first pass approximation. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of this device yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region. Two - port stability analysis with this device's S - parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Freescale Application Note AN215A, "RF Small - Signal Design Using Two - Port Parameters" for a discussion of two port network theory and stability.
NOTES
MRF1517T1 RF Device Data Freescale Semiconductor 13
NOTES
MRF1517T1 14 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
A F
3
0.146 3.71 0.095 2.41
0.115 2.92
B
D
1
2
R
L
0.115 2.92 0.020 0.51
4
N K Q
ZONE V
0.35 (0.89) X 45_" 5 _ 10_DRAFT
inches mm
SOLDER FOOTPRINT
DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25
U H
4
P C
Y
Y
E
ZONE W
G
RF Device Data Freescale Semiconductor
EEEE E EEEEEE E EEEEEE E EEEEEE E EEEEEE EEE
1 3 ZONE X
2
NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. STYLE 1: PIN 1. 2. 3. 4. DRAIN GATE SOURCE SOURCE
S
VIEW Y - Y
CASE 466 - 03 ISSUE D PLD- 1.5 PLASTIC
MRF1517T1 15
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MRF1517T1
Rev. 16 3, 5/2006 Document Number: MRF1517
RF Device Data Freescale Semiconductor

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